Análise morfológica de estruturas nanométricas de cobre e de carbeto de silício depositadas por PVD

Abstract

This study aimed to analyze the morphological, compositional, and structural characteristics of Cu and SiC thin films produced by Physical Vapor Deposition (PVD). Cu films were deposited onto glass substrates by DC magnetron sputtering using deposition times of 3, 5, and 7 minutes, while SiC films were deposited onto Al substrates by RF magnetron sputtering. The samples were characterized by X-ray fluorescence (XRF), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), and X-ray diffraction (XRD). The results showed that increasing the deposition time led to an increase in the thickness of the Cu films, ranging from approximately 193 nm to 336 nm. SEM and EDS analyses revealed the formation of continuous Cu films with the expected chemical composition, while XRD patterns indicated the face-centered cubic (FCC) crystalline structure of Cu. For the SiC films deposited on Al substrates, XRF, SEM, and EDS analyses confirmed the formation of a Si- and C-containing layer with an average thickness of approximately 242 nm. XRD analyses did not reveal crystalline peaks attributable to SiC, indicating a predominantly amorphous character of the films under the deposition conditions employed. Attempts to deposit SiC onto Cu films did not result in layers with sufficient adhesion to allow the planned characterizations. [resumo fornecido pelo autor]